Selective-area growth for novel 1.3 mu m distributed feedback laser diodeswith graded grating

Citation
T. Takiguchi et al., Selective-area growth for novel 1.3 mu m distributed feedback laser diodeswith graded grating, JPN J A P 1, 38(2B), 1999, pp. 1249-1251
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
2B
Year of publication
1999
Pages
1249 - 1251
Database
ISI
SICI code
Abstract
We demonstrate a new approach to realizing graded grating, which is effecti ve for improving the modulation characteristics of distributed feedback (DF B) laser diodes (LDs) for analog optical transmission, by using the selecti ve-area-growth (SAG) technique. An ideal parabolic thickness profile and a thickness enhancement ratio as high as 4.6 in the grating layer have been r ealized by optimizing the mask shape using the simulation technique for SAG . We also successfully realized high light-current linearity in 1.3 mu m DF B-LDs with a graded grating for the first time. It has been shown that the LDs have excellent distortion characteristics.