Growth of ultrathin epitaxial 3C-SiC films on Si(100) by pulsed supersonicfree jets of CH3SiH3

We have developed a new method for epitaxial growth of ultrathin (similar t o nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilan e (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface w as suppressed by increasing the pulse width and the surface roughness was d ecreased by decreasing the number of CH3SiH3 jet pulses. A linear relations hip was observed between the film thickness and the pulse number in the thi n film region of less than approximate to 40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irra diation.