Fabrication of 1x4 optical switch with gain using dual InGaAsP/InP laser diode amplifier

Authors
Lee, SM Oh, KR Kim, KH Kim, JS Kang, SG Song, MK Kim, HM
Citation
Sm. Lee et al., Fabrication of 1x4 optical switch with gain using dual InGaAsP/InP laser diode amplifier, JPN J A P 2, 38(3B), 1999, pp. L320-L321
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
3B
Year of publication
1999
Pages
L320 - L321
Database
ISI
SICI code
Abstract
The fabrication and characterization of a 1 x 4 optical switch module are d escribed. The switch consists of one pre-amplifier and four gate-amplifiers which are monolithically integrated with passive waveguides and splitters. We obtained Very uniform characteristics for each path. The average values of fiber-to-fiber gains and extinction ratios were 7.4 dB and -54 dB, resp ectively, for TE polarized light at 50 mA gate current and 30 mA pre-amplif ier current.