Violet InGaN/GaN/AIGaN-based laser diodes operable at 50 degrees C with a fundamental transverse mode

A violet InGAN multi-quantum-well (MQW)/GaN/AlGaN separate-confinement-hete rostructure laser diode (LD) was grown on epitaxially laterally overgrown G aN on sapphire. The threshold current density was 3.9 kA/cm(2). The LDs wit h cleaved mirror facets showed an output power as high as 30 mW under room- temperature continuous-wave (CW) operation. The stable fundamental transver se mode in the near-field patterns was observed at an output power up to 30 mW. The lifetime of the LDs at a constant output power of 5 mW was mon: th an 1,000 h under CW operation at an ambient temperature of 50 degrees C. Th e estimated lifetime was approximately 3,000 h under these high-power and h igh-temperature operating conditions.