Synthesis and high-temperature stability of Ti3SiC2

Titanium silicon carbide (Ti3SiC2) was synthesized by reactive sintering of elemental reactants. By using an off-stoichiometric ratio (1.2 moles of si licon), Ti3SiC2 with a purity of better than 98 vol.% was synthesized. The synthesized materials were annealed at 1600 degrees C and 1800 degrees C fo r up to 10 h to verify its chemical stability at high temperatures. The ter nary compound was found to be stable at temperatures as high as 1800 degree s C under an argon atmosphere. Dense compacts of Ti3SiC2 were obtained by h ot pressing of reactively sintered compacts. The oxidation behavior of the ternary compound was investigated in air at 1000 degrees C and found to be paralinear. (C) 1999 Elsevier Science S.A. All rights reserved.