Characterization of Si3N4/SiC nanocomposite by Raman scattering and XPS

Citation
Ws. Cho et al., Characterization of Si3N4/SiC nanocomposite by Raman scattering and XPS, J ALLOY COM, 285(1-2), 1999, pp. 255-259
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
285
Issue
1-2
Year of publication
1999
Pages
255 - 259
Database
ISI
SICI code
0925-8388(19990330)285:1-2<255:COSNBR>2.0.ZU;2-J
Abstract
We have synthesized Si3N4/SiC nanocomposites using a commercial polymer. Th e formed Si3N4/SiC nanocomposites have been studied using Raman scattering and X-ray photoelectron spectroscopy (WS). The Raman scattering measurement s showed that the formation of SiC started at 1200 degrees C and that the m ain phase was 3C-SiC, The XPS results suggested that the SiC nanoparticles were formed by a chemical reaction of Si provided from Si3N4 with free carb on obtained by pyrolysis of polymer. The XPS results also indicated that re sidual carbon reacted with N-2 to form CNx, which remained as an impurity p hase in the final product. (C) 1999 Elsevier Science S.A. All rights reserv ed.