Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing

Authors
Ketata, K Ketata, M Koumetz, S Marcon, J
Citation
K. Ketata et al., Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing, J ALLOY COM, 285(1-2), 1999, pp. L1-L4
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ALLOYS AND COMPOUNDS
ISSN journal
09258388 → ACNP
Volume
285
Issue
1-2
Year of publication
1999
Pages
L1 - L4
Database
ISI
SICI code
0925-8388(19990330)285:1-2<L1:ROBIIL>2.0.ZU;2-H
Abstract
In this work we present results of beryllium diffusion during the post-grow th rapid thermal annealing at 700-900 degrees C in InGaAsP layers grown by GSMBE. The experimental structure consist of a 2000 Angstrom Be-doped layer (3x10(19) cm(-3)) In0.73Ga0.27As0.58P0.42 layer sandwiched between 5000 An gstrom undoped In0.73Ga0.27As0.58P0.42 layers. A kick-out model of the subs titutional-interstitial diffusion mechanism, which involves neutral Be inte rstitial species and positively charged group III self-interstitials, is pr oposed to explain the observed SIMS depth profiles. (C) 1999 Elsevier Scien ce S.A. All rights reserved.