Deposition of a-C/B : D layers by ICRF-wall conditioning in TEXTOR-94

Citation
Hg. Esser et al., Deposition of a-C/B : D layers by ICRF-wall conditioning in TEXTOR-94, J NUCL MAT, 269, 1999, pp. 240-246
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115 → ACNP
Volume
269
Year of publication
1999
Pages
240 - 246
Database
ISI
SICI code
0022-3115(199903)269:<240:DOA:DL>2.0.ZU;2-2
Abstract
Wall conditioning and especially wall coating procedures like boronization or siliconization are indispensable for present day machines. They are also needed for future steady state plasma devices with superconducting coils a nd permanent magnetic fields like ITER. However, since important standard c onditioning techniques like Plasma Chemical Vapor Deposition (PCVD), based on de-glow discharges, are not compatible with those fields, new techniques have to be developed. This paper reports on first ion cyclotron range of f requency (ICRF)-assisted in situ deposition of a boron and carbon containin g layer of relevant thickness onto the first wall of a tokamak. The new met hod is called ion cyclotron coating (ICC) and is based on ICRF plasma produ ction in gas mixtures containing appropriate reactive precursor molecules, The new method is compatible with the magnetic held since it depends on its presence in order to produce a plasma. The geometrical arrangement of nece ssary facilities and their characteristic parameters for ICC in TEXTOR-94 w ill be described as well as the experimental procedure. The ICC-process its elf and the properties of the produced layer will be presented. (C) 1999 El sevier Science B.V. All rights reserved.