Wall conditioning and especially wall coating procedures like boronization
or siliconization are indispensable for present day machines. They are also
needed for future steady state plasma devices with superconducting coils a
nd permanent magnetic fields like ITER. However, since important standard c
onditioning techniques like Plasma Chemical Vapor Deposition (PCVD), based
on de-glow discharges, are not compatible with those fields, new techniques
have to be developed. This paper reports on first ion cyclotron range of f
requency (ICRF)-assisted in situ deposition of a boron and carbon containin
g layer of relevant thickness onto the first wall of a tokamak. The new met
hod is called ion cyclotron coating (ICC) and is based on ICRF plasma produ
ction in gas mixtures containing appropriate reactive precursor molecules,
The new method is compatible with the magnetic held since it depends on its
presence in order to produce a plasma. The geometrical arrangement of nece
ssary facilities and their characteristic parameters for ICC in TEXTOR-94 w
ill be described as well as the experimental procedure. The ICC-process its
elf and the properties of the produced layer will be presented. (C) 1999 El
sevier Science B.V. All rights reserved.