Co-deposition of deuterium with silicon doped carbon

The co-deposition of deuterium with silicon doped carbon for silicon concen trations between 0-100 at.% in the temperature range from room temperature to 1000 K has been investigated. The eroded material from various different targets was caught on collectors together with the reflected D to build up the co-deposited layers, which were analysed with MeV ion beam techniques. The amount of trapped D per re-deposited target atom depends weakly on the Si concentration. The maximum of about 0.7 D/(Si + C) was found at Si/C ap proximate to 1. For pure C and pure Si the D concentration is about 0.45 an d 0.5 D atoms per re-deposited target atom at room temperature, respectivel y. For increasing deposition temperature the D concentration does not decre ase significantly until about 600 It. At about 1000 K the D concentration f or pure carbon layers is still about 30% of the concentration at room tempe rature. Also, co-deposited layers of stainless steel and of titanium-carbon mixtures were investigated. (C) 1999 Elsevier Science B.V. All rights rese rved.