Deuterium transport in Cu, CuCrZr, and Cu/Be

This paper presents the results of deuterium implantation/permeation experi ments and TMAP4 simulations for a CuCrZr alloy, for OFHC-Cu and for a Cu/Be bi-layered structure at temperatures from 700 to 800 K. Experiments used a mass-analyzed, 3-keV D-3(+) ion beam with particle flux densities of 5 x 1 0(19) to 7 x 10(19) D/m(2) s. Effective diffusivities and surface molecular recombination coefficients were derived giving Arrhenius pre-exponentials and activation energies for each material: CuCrZr ahoy, (2.0 x 10(-2) m(2)/ s, 1.2 eV) for diffusivity and (2.9 x x 10(-14) m(4)/s, 1.92 eV) for surfac e molecular recombination coefficients; OFHC Cu, (2.1 x 10(-6) m(2)/s, 0.52 eV) for diffusivity and (9.1 x 10(-18) m(4)/s, 0.99 eV) for surface molecu lar recombination coefficients. TMAP4 simulation of permeation data measure d for a Cu/Be bilayer sample was achieved using a four-layer structure (Cu/ BeO interface/Be/BeO back surface) and recommended values for diffusivity a nd solubility in Be, BeO and Cu. (C) 1999 Elsevier Science B.V. All rights reserved.