A 300-nm-thick diamondlike carbon (DLC) film was deposited on to a heavily
doped n-type Si (111) wafer by filtered are deposition. A flat thin film cy
lindrical emitter array was then fabricated by reactive-ion etching the DLC
film. Its electron field emission properties were studied using a simple d
iode structure. A field emission current of 0.1 mu A was detected under an
electric field of 5.2 V/mu m. As large as 64.1 mA/cm(2) of field emission c
urrent density was achieved after an activation process under a 39 V/mu m f
ield. An image formed on the anode screen showed that electron field emissi
on from the DLC flat emitter array is rather uniform. The field emission be
havior is also consistent with Fowler-Nordheim theory. Hydrogen plasma surf
ace treatments were found to enhance the field emission properties. (C) 199
9 American Vacuum Society. [S0734-211X(99)09002-2].