Single-mask silicon microtriode

Authors
Garner, DM Amaratunga, GAJ
Citation
Dm. Garner et Gaj. Amaratunga, Single-mask silicon microtriode, J VAC SCI B, 17(2), 1999, pp. 315-319
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
315 - 319
Database
ISI
SICI code
1071-1023(199903/04)17:2<315:SSM>2.0.ZU;2-R
Abstract
A single-mask structure for a micrometer-sized silicon triode (microtriode) is proposed. The fabrication of the device has been optimized to produce a suspended chromium gate above a pyramidal silicon cathode. The gate approa ches from the side, in the same plane as the anode. Field emission between the anode and cathode in diode-mode operation in atmosphere has been confir med. Diode-mode operation of the device is suitable for sensor applications . (C) 1999 American Vacuum Society. [S0734-211X(99)04902-1].