Modeling of field emission microtriodes with Si semiconductor emitters

Field emission arrays using Si semiconductor emitters have been developed u sing different technologies and configurations, including the field emissio n microtriode (FEMT). Previously reported modeling results for FEMT structu res considered metallic tips and, accordingly, used the Fowler-Nordheim (FN ) current density-electric field J(E) relationship. In this article, modifi ed J(Si)(E) equations for Si semiconductor emitters are used. The FEMT mode l takes;into account a volcano-shaped gate with an: emitter protruding thro ugh the gate opening. The electric field distribution in the device is nume rically computed solving the two-dimensional Laplace equation for the elect rical potential using a lattice with a varying grid size. The field emissio n current is obtained through integration of J(Si)(E) over the emitter surf ace. No field enhancement and area factors are used. The FEMT field emissio n: current is computed as function of the device parameters, and is compare d to "standard":results derived using the FN J(E) relationship. Similar mod eling trends are obtained for; the cases of FEMTs with metal and Si emitter s. (C) 1999 American Vacuum Society. [S0734-211X(99)04202-X].