Novel field emitter array technology for subhalf-micron diameter gates

We have successfully developed a novel field emitter array (FEA) technology with low leakage current between each emitter and its subhalf-micron diame ter gate. The device has two features: (1) a locally oxidized layer and (2) an additional Si3N4 layer as a second insulator layer. In a fabricated FEA with a 0.38-mu m-diam gate, the insulator thickness was 0.26 mu m, two tim es thicker than that of the conventional structure, and the creeping distan ce was ten times longer. Its emission. threshold voltage is 32 V, and its l eakage current has been reduced to less than a tenth of previous levels. (C ) 1999 American Vacuum Society. [S0734-211X(99)05602-4].