High emission current double-gated field emitter arrays

Authors
Hosono, A Kawabuchi, S Horibata, S Okuda, S Harada, H Takai, M
Citation
A. Hosono et al., High emission current double-gated field emitter arrays, J VAC SCI B, 17(2), 1999, pp. 575-579
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
575 - 579
Database
ISI
SICI code
1071-1023(199903/04)17:2<575:HECDFE>2.0.ZU;2-H
Abstract
To realize a high current under focusing operation we investigated the stru cture of double-gated field emitter arrays (FEAs) and tried to anodize the tip of the silicon emitters. It was found from these investigations that th e FEAs with the thick extraction gate could maintain high emission current during focusing operation. Furthermore, the anodized Si FEAs with thick ext raction gate achieved a high emission current per tip of about 300 nA under focusing operation. (C) 1999 American Vacuum Society. [S0734-211X(99)11702 -5].