Low-voltage operation from the tower structure metal-oxide-semiconductor field-effect transistor Si field emitter

To improve emission stability and realize low rum-on voltage, a silicon fie ld emitter controlled by a metal-oxide-semiconductor field effect transisto r (MOSFET) was fabricated and demonstrated. The emitter cathode was fabrica ted in the n-well drain of the MOSFET on ap-type Silicon substrate. In addi tion to the: extraction gate, another electrode was introduced as the MOSFE T's control gate. This gate's oxide thickness was designed to be thinner th an that Of the extraction gate for low turn-on voltage; Furthermore, two ty pes of drain structure were adopted to compare device reliability with rega rd to impact ionization effect. Experimental results showed that emission c urrent was effectively controlled by the MOSFET at;a gate voltage of less t han 5 V. It was found that impact ionization was caused near the drain edge , where a high electric field was concentrated, in the conventional drain s tructure. Consequently, MOSFET characteristics were significantly influence d. (C) 1999 American Vacuum Society. [S0734-211X(99)07302-3].