Emission stability of anodized silicon field emitter arrays

Authors
Kim, HR Jessing, JR Parker, DL
Citation
Hr. Kim et al., Emission stability of anodized silicon field emitter arrays, J VAC SCI B, 17(2), 1999, pp. 601-603
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
601 - 603
Database
ISI
SICI code
1071-1023(199903/04)17:2<601:ESOASF>2.0.ZU;2-K
Abstract
The electrical characteristics of porous silicon field emitter arrays (PSFE As) was studied. The surface of silicon field emitters was modified by elec trochemical etching with HF: ethanol solution. Porous silicon consists of a high density of submicroscopic fibrils which serve as increased emission s ites per tip, hence significantly improving the emission characteristics. P SFEAs exhibited low turn-on voltage and high emission current with small cu rrent fluctuation and good reproducibility. (C) 1999 American Vacuum Societ y. [S0734-211X(99)11602-0].