Fabrication of tungsten-coated silicon-based gated emitters

Citation
L. Chen et Mm. El-gomati, Fabrication of tungsten-coated silicon-based gated emitters, J VAC SCI B, 17(2), 1999, pp. 638-641
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
638 - 641
Database
ISI
SICI code
1071-1023(199903/04)17:2<638:FOTSGE>2.0.ZU;2-8
Abstract
The present work reports-on the fabrication of tungsten-coated silicon-base d gated emitters. The main fabrication procedures include: forming silicon tips by way of reactive ion etching without thermal oxidation sharpening, t ungsten coating and dielectric layer coating though plasma-enhanced chemica l vapor deposition, metal layer coating by evaporation, and gate aperture o pening by wet chemical etching processes. Scanning electron microscopy in c ombination with energy dispersive x-ray analysis were employed to study the emitters during the fabrication. The radii of the tungsten-coated tips wer e about 30 nm. The gated emitters have a volcano shape with gate aperture d iameter of less than 3 mu m and a silicon dioxide insulating layer 1 mu m t hick. The gated field emitters exhibited a low turn-on voltage of about 60 V. Emission current above 15 mu A from a single emitter was observed. Fowle r-Nordheim plots of the emitted current from these emitters confirmed the f ield emission-behavior. (C) 1999 American Vacuum Society. [S0734-211X(99)09 702-4].