Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating

Authors
Chi, EJ Shim, JY Baik, HK Lee, HY Lee, SM Lee, SJ
Citation
Ej. Chi et al., Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating, J VAC SCI B, 17(2), 1999, pp. 731-733
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
731 - 733
Database
ISI
SICI code
1071-1023(199903/04)17:2<731:EOEEFS>2.0.ZU;2-V
Abstract
Silicon field emitters have been coated with nitrogenated amorphous carbon (alpha-C:N) in order to enhance the electron emission current. The coating was produced using a helical resonator plasma enhanced chemical vapor depos ition system. The alpha-C:N film is amorphous and hydrogenated with about 3 0 at % hydrogen. Nitrogen is also included in the amorphous network and red uces the work function by doping. alpha-C:N coating enhances significantly the emission current of silicon tips. (C) 1999 American Vacuum Society. [S0 734-211X(99)05702-9].