Localisation and interaction effects in metallic n-type InP

Citation
A. El Kaaouachi et al., Localisation and interaction effects in metallic n-type InP, PHYSICA B, 266(3), 1999, pp. 226-228
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
266
Issue
3
Year of publication
1999
Pages
226 - 228
Database
ISI
SICI code
0921-4526(199905)266:3<226:LAIEIM>2.0.ZU;2-H
Abstract
We present results on the magnetic field induced metal-insulator transition (MIT) in compensated InP. The experiments were carried out at low temperat ures in the range 4.2-0.066 K and in magnetic fields up to 11 T. Not too cl ose to the MIT the electrical conductivity sigma was found to obey sigma = sigma(T = 0) + mT(1/2) where both the inelastic diffusion length L-1 simila r to (sigma(T = 0))(3/2)/T-1/2 and the interaction length L-T similar to (s igma(T = 0))(1/2)/T-1/2 contribute to a T-1/2 term in sigma. It is convenie nt to develop a criterion to distinguish their contribution. It is based on the relation between the magnitude m and the zero temperature conductivity sigma(T = 0). (C) 1999 Elsevier Science B.V. All rights reserved.