Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

Authors
Gusev, OB Ber, BY Bresler, MS Zakharchenya, BP Yassievich, IN Khitrova, G Gibbs, HM Prineas, DP Lindmark, EK Masterov, VF
Citation
Ob. Gusev et al., Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures, PHYS SOL ST, 41(3), 1999, pp. 484-488
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF THE SOLID STATE
ISSN journal
10637834 → ACNP
Volume
41
Issue
3
Year of publication
1999
Pages
484 - 488
Database
ISI
SICI code
1063-7834(199903)41:3<484:EIOGAA>2.0.ZU;2-2
Abstract
Incorporation of erbium into GaAs/AlGaAs quantum-well structures in the cou rse of their MBE growth has been shown experimentally to initiate effective Ga and Al interdiffusion and Er diffusion due to the erbium-induced enhanc ed vacancy formation. A mechanism for the formation of cation vacancies is proposed, which is based on the generation of local strains by the incorpor ating erbium. It is shown that erbium interacts with aluminum to produce in AlGaAs aluminum-enriched, erbium-containing clusters. (C) 1999 American In stitute of Physics. [S1063-7834(99)03303-1].