Kinetics of silicon of self-interstitials using silicon membranes during thermal oxynitridation

A study was carried out to determine the silicon self-interstitial diffusiv ity and surface recombination velocity at the SiO2/Si and Si3N4/Si interfac es, as well as the equilibrium self-interstitial concentration in both floa t zone and Czochrlaski silicon materials. The experimental part was based o n the monitoring of the growth/shrinkage kinetics of stacking faults on the front surface of a silicon membrane capped with SiO2 or Si3N4 layers under silicon self-interstitials injection from the back surface. The silicon se lf-interstitials source was an oxinitridation process generating a constant self-interstitial concentration. The analysis of the experimental data use d a kinetic model based on the self-interstitial diffusion equation as well as on the hypothesis that self-interstitials diffusivity and their interfa ce recombination velocity are time independent. From this hypothesis and th e used experimental conditions, it was possible to achieve a satisfactory f it to experimental data that has allowed to find single values for the self -interstitial diffusivity and interface recombination velocity. Likewise, t hose experimental conditions allowed to measure the same self-interstitial kinetic coefficients values in both types of the used silicon materials.