We report on the magnetization, colossal magnetoresistance (CMR), thermoele
ctric power (TEP) and Nernst coefficient (Q) measurements of a La0.7Ca0.3Mn
O3 bulk ceramic sample (T(c)similar to 265 K), The semiconductor-metal tran
sition near T-c is attributed to an increase in the hole density. For T les
s than or equal to T-c, an anomalous suppression of the Nernst coefficient
was observed when the field increased from 0.38 to 1.8 T. The data suggest
a field increased mobility of the charge carriers as a principal cause for
the CMR. (C) 1999 Elsevier Science Ltd. All rights reserved.