Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors

Authors
Dugaev, VK Litvinov, VI Dobrowolski, W Story, T
Citation
Vk. Dugaev et al., Interaction between magnetic layers in structures with narrow-gap IV-VI semiconductors, SOL ST COMM, 110(6), 1999, pp. 351-355
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
110
Issue
6
Year of publication
1999
Pages
351 - 355
Database
ISI
SICI code
0038-1098(1999)110:6<351:IBMLIS>2.0.ZU;2-Y
Abstract
The results of calculation of the indirect exchange interaction between mag netic layers are presented for the case of a structure with narrow-gap semi conducting TV-VI quantum well. The main mechanism is a magnetic polarizatio n of the size-quantized electrons and holes inside the well. This type of i nteraction is suggested for the explanation of recent experiments on EuS/Pb S structures. (C) 1999 Elsevier Science Ltd. All rights reserved.