Cathodoluminescence of GaN doped with Sm and Ho

We report the first observation of visible cathodoluminescence of the rare earth (RE) elements Sm, Ho implanted in GaN. The implanted samples were giv en isochronal thermal annealing treatments at a temperature of 1100 degrees C in N-2, at atmospheric pressure to recover implantation damages and acti vate the RE ions. The sharp characteristic emission lines corresponding to Sm3+ and Ho3+ intra-4f(n)-shell transitions are resolved in the spectral ra nge from 400 to 1000 nm, and observed over the temperature range of 11-411 K. The cathodoluminescence emission is only weakly temperature dependent. T he results indicate that RE doped GaN epilayers are suitable as a material for visible optoelectronic devices. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.