Active and passive plasma spectroscopy in a plasma immersion ion implantation (PIII) experiment

Plasma immersion ion implantation (PIII) is an emerging surface modificatio n technique that can be used for three-dimensional ion implantation of non- planar components at low cost compared with the traditional line-of-sight i mplantation method using accelerators. We have developed a PIII system base d on 2.45 GHz microwave-generated plasmas with densities of 10(16)-10(17) m (-3) and temperatures of few eV which allow high-ion-flux implantation in c omponents of complex shape. These plasma parameters are also adequate for d iagnostics using passive and active spectroscopic methods even in the prese nce of high voltages applied to the samples. The principles of active plasm a spectroscopy (beam emission spectroscopy) for microwave PIII plasmas and its present status in our laboratory, as well as preliminary passive spectr oscopy results, are described. Furthermore, results on the characterization of some irradiated samples and optimization of our PIII device are also pr esented. (C) 1999 Elsevier Science S.A. All rights reserved.