A novel jet matrix plasma source (JEMPS) for large area film deposition is
presented. A high density plasma is produced by use of low temperature plas
ma jets extracted from 13.56 MHz hollow cathode discharges. A prototype of
JEMPS is realized as the matrix of 7 x 11 plasma jets. The influence of gas
flow, radio frequency (RF) power and pressure on the ion concentration is
investigated. The typical working conditions of JEMPS are discharge gas flo
w 500-1000 seem, pressure 30-100 Pa and RF power up to 400 W. The ion conce
ntration measured under such conditions by use of a double Langmuir probe a
mounts up to 7 x 10(10) cm(-3) for argon plasma jets. Local variation of th
e ion concentration in a plane parallel to the anode decreases from 35% to
5% if the distance from the anode increases from 10 to 45 mm. A remote plas
ma deposition process is carried out with an oxygen plasma and the silicon
organic monomer hexamethyldisiloxane and has a pressure range of between 30
and 100 Pa. The actual maximum deposition rate is 366 nm min(-1). The loca
l film thickness variation is <20%. (C) 1999 Elsevier Science S.A. All righ
ts reserved.