Growth modes in homoepitaxy on vicinal GaAs(110) surfaces

The growth of GaAs by molecular beam epitaxy on (110) substrates vicinal to (111)A has been systematically studied by atomic force microscopy at diffe rent As/Ga flux ratios and growth rates. The striking variety of surface mo rphologies observed after deposition of 250 ML at 450 degrees C has been co rrelated with four distinct growth regimes and a diagram of growth regimes as a function of growth conditions has been constructed. We discuss the mic roscopic origin of the various surface morphologies in terms of growth mode s and relative adatom populations. (C) 1999 Elsevier Science B.V. All right s reserved.