Anion-sensitive field-effect transistors based on sol-gel-derived membranes incorporating quaternary ammonium salts

Citation
K. Kimura et al., Anion-sensitive field-effect transistors based on sol-gel-derived membranes incorporating quaternary ammonium salts, ANALYST, 124(4), 1999, pp. 517-520
Citations number
12
Categorie Soggetti
Chemistry & Analysis","Spectroscopy /Instrumentation/Analytical Sciences
Journal title
ANALYST
ISSN journal
00032654 → ACNP
Volume
124
Issue
4
Year of publication
1999
Pages
517 - 520
Database
ISI
SICI code
0003-2654(199904)124:4<517:AFTBOS>2.0.ZU;2-G
Abstract
Quaternary alkylammonium chlorides were encapsulated or bonded covalently t o sol-gel-derived membranes made of mixtures of two alkoxysilanes so as to obtain sensing membranes for anion-sensitive field-effect transistors. Both types of anion sensors responded to chloride-ion activity changes with hig h sensitivity. The anion-sensing membranes modified chemically by an alkoxy silyl derivative of quatenary ammonium salt are superior to those simply en capsulating an ammonium salt in their durability and protein-adsorption pro perties. The anion sensors are applicable to chloride-ion assay in serum sa mples.