Citation
Ata. Wee et al., Spin-dependent tunneling junctions with Fe55Ni45 electrodes and in situ resistive measurement of oxide growth, APPL PHYS L, 74(17), 1999, pp. 2528-2530
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
74
Issue
17
Year of publication
1999
Pages
2528 - 2530
Database
ISI
SICI code
0003-6951(19990426)74:17<2528:STJWFE>2.0.ZU;2-0
Abstract
We have fabricated Si/Ta/Fe55Ni45/FeMn/Fe55Ni45/Al2O3/Fe55Ni45/Ta spin-depe
ndent tunneling junctions, in which the tunneling barrier is formed by plas
ma oxidation. The as-deposited Fe55Ni45/FeMn bilayer has a surface exchange
energy of 0.13 erg/cm(2). A maximum tunneling magnetoresistive ratio of 16
.5% is obtained in the junctions. We also developed an in situ resistance m
easurement technique to monitor tunneling barrier thickness during plasma o
xidation. The plasma oxidation data are fitted to an oxide growth model bas
ed on cation hopping current and sputtering. (C) 1999 American Institute of
Physics. [S0003-6951(99)05017-2].