Citation
M. Joseph et al., Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition, APPL PHYS L, 74(17), 1999, pp. 2534-2536
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
74
Issue
17
Year of publication
1999
Pages
2534 - 2536
Database
ISI
SICI code
0003-6951(19990426)74:17<2534:FBOLZT>2.0.ZU;2-V
Abstract
Thin films of Li-doped ZnO of different compositions (Zn1-xLix)O, x=0.1, 0.
17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer,
by the pulsed laser deposition method. Ferroelectric behavior with a memor
y window of 1.2 V has been observed in capacitance-voltage measurements. Th
e peak maximum in the capacitance-temperature curve suggests that the ferro
electric phase transition occurs around 340 K. (C) 1999 American Institute
of Physics. [S0003-6951(99)01617-4].