A self-assembled single-electron tunneling transistor

A single-electron tunneling transistor was made by capturing a chemically s ynthesized gold cluster between two gold electrodes. The transistor had a q uasiperiodic modulation of the current-voltage characteristics as a functio n of a gate voltage applied to an oxidized aluminum electrode at 4.2 K. The Coulomb blockade voltage for this device was 50 mV observed at 4.2 K and r oom temperature. The maximum observed blockade voltage was 200 mV for devic es without gate. (C) 1999 American Institute of Physics. [S0003-6951(99)052 17-1].