Weak localization and interaction in doped CdTe

Citation
W. Poirier et al., Weak localization and interaction in doped CdTe, EUR PHY J B, 8(2), 1999, pp. 293-300
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL B
ISSN journal
14346028 → ACNP
Volume
8
Issue
2
Year of publication
1999
Pages
293 - 300
Database
ISI
SICI code
1434-6028(199903)8:2<293:WLAIID>2.0.ZU;2-2
Abstract
We study weak localization and electron interaction in CdTe:In by low tempe rature magnetoconductance experiments to quantify the phase breaking length and the importance of interactions in CdTe. Then we study superconducting contacts to CdTe:In by transport measurements at very low temperature. The conductance-voltage characteristics of the superconducting contact exhibits the main features of a SIN junction, with a superimposed zero bias anomaly . This anomaly in the density of states of CdTe is very sensitive to magnet ic field and probably induced by the proximity of the superconducting conta ct.