Implant-apertured and index-guided vertical-cavity surface-emitting lasers(I-2-VCSEL's)

We have fabricated vertical-cavity surface-emitting lasers (VCSEL's) which, for the first time, effectively combine a shallow ion implanted aperture, for current confinement under a thin highly conducting lateral current inje ction layer, and an independent index guide for optical beam confinement (I -2-VCSEL's), Both features are possible only because they are made before a top dielectric mirror is deposited and patterned, and are photolithographi cally defined for improved size reproducibility compared to oxide-confined designs. The devices emit near 980 ma and have optical power outputs of 1 m W at 2.5-mA input, The I-2-VCSEL design also easily incorporates coplanar c ontacts allowing us to operate flip-chip bonded I-2-VCSEL's on silicon test chips at data rates of nearly I Gb/s.