Quasi-planar monolithic integration of high-speed VCSEL and resonant enhanced photodetector arrays

We describe the quasi-planar monolithic integration of oxide-confined verti cal-cavity surface-emitting laser (VCSEL) and resonant enhanced photodetect or (REPD) arrays, These high speed devices are fabricated using an approach in which current apertures with a range of different sizes are formed by c oncatenating a number of discrete crescent shaped oxidation fronts. This ap proach preserves planarity while improving dimensional control for devices with very small oxide apertures (<4 mu m), It resulted in VCSEL's with elec trical and optical characteristics that are comparable to those of etched-m esa devices, while producing high-speed REPD's with a rise time of similar to 65 ps,