S. Shareef et al., Origin of doping dependence of transition temperature of La2-xBaxCuO4 in Van Hove singularity scenario, I J PA PHYS, 37(2), 1999, pp. 159-162
The influence of some intrinsic parameters (e.g., Fermi level shift from th
e Van Hove singularity (VHs), electron-phonon coupling parameter, normalise
d density of states) on the variation of transition temperature (T-c) with
doping for high temperature cuprate superconductors La2-xBaxCuO4 have been
examined in the VHs scenario. The T-c-equation for high temperature cuprate
superconductors has been utilized to determine the doping derivative of el
ectronic density of states and Debye temperature in the VHs. The doping der
ivatives of transition temperature, which represent the variation of T-c on
doping, have been determined theoretically and compared with that obtained
from the experimental transition temperature versus doping curve.