Origin of doping dependence of transition temperature of La2-xBaxCuO4 in Van Hove singularity scenario

Citation
S. Shareef et al., Origin of doping dependence of transition temperature of La2-xBaxCuO4 in Van Hove singularity scenario, I J PA PHYS, 37(2), 1999, pp. 159-162
Citations number
10
Categorie Soggetti
Physics
Journal title
INDIAN JOURNAL OF PURE & APPLIED PHYSICS
ISSN journal
00195596 → ACNP
Volume
37
Issue
2
Year of publication
1999
Pages
159 - 162
Database
ISI
SICI code
0019-5596(199902)37:2<159:OODDOT>2.0.ZU;2-J
Abstract
The influence of some intrinsic parameters (e.g., Fermi level shift from th e Van Hove singularity (VHs), electron-phonon coupling parameter, normalise d density of states) on the variation of transition temperature (T-c) with doping for high temperature cuprate superconductors La2-xBaxCuO4 have been examined in the VHs scenario. The T-c-equation for high temperature cuprate superconductors has been utilized to determine the doping derivative of el ectronic density of states and Debye temperature in the VHs. The doping der ivatives of transition temperature, which represent the variation of T-c on doping, have been determined theoretically and compared with that obtained from the experimental transition temperature versus doping curve.