Effect of Sn4+/Nb5+ on de resistivity as a function of dopant concentration
, temperature and duration of applied field for Mn-Zn ferrites has been stu
died. Frequency response of ac resistivity for all the specimens has also b
een evaluated. Results are discussed considering vacancies, influence of va
cancies, valence fluctuations along with hopping mechanism. Two transition
temperatures Ts and Te are observed relating to change in the conduction me
chanism at low temperature range and in high temperature range due to trans
formation from ferromagnetic to paramagnetic state. Activation energies obt
ained in low temperature range are lower than high temperature range activa
tion energy values and are explained. The decrease of ac resistivity with f
requency is attributed to the dielectric relaxation caused by bound charge
carriers.