Physical properties of amorphous Se0.75Ge0.25-ySby semiconductors

Effect of the addition of varying amounts of antimony in concentrations fro m 0.01 to 0.20 at % on de conductivity of Se.Ge glass is analysed. The elec trical conductivity of amorphous Se0.75Ge0.25-ySby films have been determin ed during and after light exposure and at different temperatures. The time dependence of the electrical conductivity measured in darkness or when expo sed to light has been studied for films of different compositions and diffe rent thicknesses. The conduction activation energy Delta E and the pre-expo nential factors sigma(o)(0.T) are found to decrease with increasing Sb cont ent. The mean value of the threshold voltage, (V) over bar th, was measured in darkness and after exposure of light for different compositions and tem peratures. The pronounced glass-forming tendencies of alloys of Se and Ge w ith Sb were discussed in terms of the chemical bonds expected to be present in these materials. These chemical bonds have been used to estimate the co hesive energies (CE) of these glasses.