A. Romanowski et al., Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers, J APPL PHYS, 85(9), 1999, pp. 6408-6414
The kinetics for dissolution/growth of defects in Czochralski silicon wafer
s during a 1 h high temperature annealing at 1100 degrees C has been invest
igated. The size and distribution of point defects such as vacancy, self-in
terstitial and oxygen interstitial, are simulated for oxygen and hydrogen a
mbient annealing. The boundary conditions are analyzed separately for hydro
gen and oxygen annealing. A deterministic homogeneous model is used for des
cribing the defect kinetics. The self-interstitial injection rate during ox
ide annealing is calculated from the Deal-Grove model. Simulated void and o
xygen size distributions are compared to B- and C-mode capacitor failure di
stribution functions. Experimental and theoretical data show that voids can
be dissolved during either oxygen or hydrogen annealing, while oxygen prec
ipitates are dissolved during hydrogen annealing and only partially dissolv
ed during oxygen annealing. (C) 1999 American Institute of Physics. [S0021-
8979(99)05409-2].