Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

The kinetics for dissolution/growth of defects in Czochralski silicon wafer s during a 1 h high temperature annealing at 1100 degrees C has been invest igated. The size and distribution of point defects such as vacancy, self-in terstitial and oxygen interstitial, are simulated for oxygen and hydrogen a mbient annealing. The boundary conditions are analyzed separately for hydro gen and oxygen annealing. A deterministic homogeneous model is used for des cribing the defect kinetics. The self-interstitial injection rate during ox ide annealing is calculated from the Deal-Grove model. Simulated void and o xygen size distributions are compared to B- and C-mode capacitor failure di stribution functions. Experimental and theoretical data show that voids can be dissolved during either oxygen or hydrogen annealing, while oxygen prec ipitates are dissolved during hydrogen annealing and only partially dissolv ed during oxygen annealing. (C) 1999 American Institute of Physics. [S0021- 8979(99)05409-2].