D. Zubia et Sd. Hersee, Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials, J APPL PHYS, 85(9), 1999, pp. 6492-6496
This article describes an approach to the heteroepitaxy of lattice mismatch
ed semiconductors, that we call nanoheteroepitaxy. The theory developed her
e shows that the 3D stress relief mechanisms that are active when an epilay
er is nucleated as an array of nanoscale islands on a compliant patterned s
ubstrate, will significantly reduce the strain energy in the epilayer and e
xtend the critical thickness dramatically. Calculations show that with the
scale of patterning that is achievable with advanced lithography (10-100 nm
) we can eliminate mismatch dislocations from heterojunctions that are mism
atched by as much as 4.2%. (C) 1999 American Institute of Physics. [S0021-8
979(99)03109-6].