Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

Citation
D. Zubia et Sd. Hersee, Nanoheteroepitaxy: The application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials, J APPL PHYS, 85(9), 1999, pp. 6492-6496
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
9
Year of publication
1999
Pages
6492 - 6496
Database
ISI
SICI code
0021-8979(19990501)85:9<6492:NTAONA>2.0.ZU;2-V
Abstract
This article describes an approach to the heteroepitaxy of lattice mismatch ed semiconductors, that we call nanoheteroepitaxy. The theory developed her e shows that the 3D stress relief mechanisms that are active when an epilay er is nucleated as an array of nanoscale islands on a compliant patterned s ubstrate, will significantly reduce the strain energy in the epilayer and e xtend the critical thickness dramatically. Calculations show that with the scale of patterning that is achievable with advanced lithography (10-100 nm ) we can eliminate mismatch dislocations from heterojunctions that are mism atched by as much as 4.2%. (C) 1999 American Institute of Physics. [S0021-8 979(99)03109-6].