Transverse magnetoresistance of metal interfaces with Hg1-xCdxTe

Authors
Hu, XN Fang, JX Gong, HM Zhao, J Lu, HQ Li, XY Hu, XW
Citation
Xn. Hu et al., Transverse magnetoresistance of metal interfaces with Hg1-xCdxTe, J APPL PHYS, 85(9), 1999, pp. 6606-6609
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
9
Year of publication
1999
Pages
6606 - 6609
Database
ISI
SICI code
0021-8979(19990501)85:9<6606:TMOMIW>2.0.ZU;2-Z
Abstract
A magnetic field perpendicular to a two-terminal semiconductor will increas e the sheet resistance under the contact as well as that of the noncontact region. A method using magnetoresistance is presented in this article to st udy the carrier's behavior at the metal-Hg1-xCdxTe interface, in which we c onsider the disruption of the interface by the deposition of metal. Experim ental results show that an inversion layer exists between p-Hg0.783Co0.217T e and the deposited Sn/Au. (C) 1999 American Institute of Physics. [S0021-8 979(99)07509-X].