Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures

Authors
Pokatilov, EP Fomin, VM Balaban, SN Gladilin, VN Klimin, SN Devreese, JT Magnus, W Schoenmaker, W Collaert, N Van Rossum, M De Meyer, K
Citation
Ep. Pokatilov et al., Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures, J APPL PHYS, 85(9), 1999, pp. 6625-6631
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
9
Year of publication
1999
Pages
6625 - 6631
Database
ISI
SICI code
0021-8979(19990501)85:9<6625:DOFACC>2.0.ZU;2-3
Abstract
A quantum-mechanical description of charge carriers is presented for nanosc aled cylindrical metal-oxide-semiconductor structures. The Schrodinger and Poisson equations are solved self-consistently within the framework of the Hartree approximation and the profiles of the electrostatic field and the c harge carrier densities are obtained. (C) 1999 American Institute of Physic s. [S0021-8979(99)10109-9].