Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

Authors
Fu, L Tan, HH Johnston, MB Gal, M Jagadish, C
Citation
L. Fu et al., Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers, J APPL PHYS, 85(9), 1999, pp. 6786-6789
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
9
Year of publication
1999
Pages
6786 - 6789
Database
ISI
SICI code
0021-8979(19990501)85:9<6786:PIIIIQ>2.0.ZU;2-P
Abstract
Proton irradiation with subsequent rapid thermal annealing was used to inve stigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large p hotoluminescence (PL) energy shifts were observed in both materials. Compar atively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/G aAs samples because of the presence of Al in the barriers and also better r ecovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well la sers were fabricated and up to 49.3-nm-emission wavelength shift was observ ed in the proton-irradiated laser with no significant degradation in device characteristics. (C) 1999 American Institute of Physics. [S0021-8979(99)09 609-7].