Piezoresistive effect in AlN/GaN short range superlattice structures

We report on a strong piezoresistive effect in AlN-GaN short-range superlat tices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially l arger than the values of the gauge factor reported for GaN-AlN-GaN semicond uctor-insulator-semiconductor structures. The measured data are in good agr eement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN-GaN-based material s for the development of piezoelectric and piezoresistive sensors. (C) 1999 American Institute of Physics. [S0021-8979(99)03007-8].