Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn

Citation
Y. Huai et al., Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn, J APPL PHYS, 85(8), 1999, pp. 5528-5530
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
5528 - 5530
Database
ISI
SICI code
0021-8979(19990415)85:8<5528:SHWSAC>2.0.ZU;2-C
Abstract
Spin-valve (SV) films Si(100)/Ta30/NiFe50/CoFe20/Cu26/ CoFe23/Ru7/CoFe20/Ir Mn50/Ta30 (in Angstrom) exhibit a room temperature (RT) giant magnetoresita nce (GMR) ratio of 8.5% with an effective exchange pinning field (H-eex) of similar to 1.3 kOe and an antiferromagnetic (AF) saturation field (Hs) of; similar to 6.0 kOe. The synthetic spin valve shows a GMR ratio of 5.0% at 150 degrees C with H-eex >500 Oe, while a conventional spin valve [Si(100)/ Ta50/NiFe50/CoFe20/Cu28/CoFe22/IrMn50/Ta50 in Angstrom] has a GMR ratio of 5.0% with H-ex,200 Oe. The synthetic sample also showed a superior thermal stability with a RT GMR value of 6.9% (compared to 6.1% for conventional sa mple) after an anneal at 250 degrees C for 10 h. Shielded narrow track synt hetic SV readers demonstrated high amplitude, large dynamic range, and exce llent magnetic stability, indicating extendibility for ultrahigh density re ad head applications. (C) 1999 American Institute of Physics. [S0021-8979(9 9)71308-3].