Dy. Kim et al., Effect of uniaxial anisotropy on anisotropic magnetoresistance: Thickness dependence in bilayer NiO(30 nm)/NiFe(t), J APPL PHYS, 85(8), 1999, pp. 5783-5785
The uniaxial anisotropy field H-K and angle gamma from exchange coupling fi
eld in anisotropic magnetoresistance sample has been analyzed on the basis
of the rotational magnetization of single domain. The anisotropy field HK i
n bilayer NiO(30 nm)/NiFe(t) obtained from the measured magnetoresistance p
rofiles at magnetizing angle theta-0 degrees and 90 degrees from the exchan
ge coupling field changes from positive to negative as the thickness of NiF
e increases, transition at about 20 nm. The anisotropy field \H-K\, and ang
le gamma show a minimum values at the transition thickness, which is the op
timum thickness in anisotropic magnetoresistance sample design in order to
increase the field sensitivity and reduces hysteresis loss. (C) 1999 Americ
an Institute of Physics. [S0021-8979(99)36408-2].