Effect of uniaxial anisotropy on anisotropic magnetoresistance: Thickness dependence in bilayer NiO(30 nm)/NiFe(t)

Citation
Dy. Kim et al., Effect of uniaxial anisotropy on anisotropic magnetoresistance: Thickness dependence in bilayer NiO(30 nm)/NiFe(t), J APPL PHYS, 85(8), 1999, pp. 5783-5785
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
5783 - 5785
Database
ISI
SICI code
0021-8979(19990415)85:8<5783:EOUAOA>2.0.ZU;2-1
Abstract
The uniaxial anisotropy field H-K and angle gamma from exchange coupling fi eld in anisotropic magnetoresistance sample has been analyzed on the basis of the rotational magnetization of single domain. The anisotropy field HK i n bilayer NiO(30 nm)/NiFe(t) obtained from the measured magnetoresistance p rofiles at magnetizing angle theta-0 degrees and 90 degrees from the exchan ge coupling field changes from positive to negative as the thickness of NiF e increases, transition at about 20 nm. The anisotropy field \H-K\, and ang le gamma show a minimum values at the transition thickness, which is the op timum thickness in anisotropic magnetoresistance sample design in order to increase the field sensitivity and reduces hysteresis loss. (C) 1999 Americ an Institute of Physics. [S0021-8979(99)36408-2].