First principles modeling of magnetic random access memory devices (invited)

Authors
Butler, WH Zhang, XG Schulthess, TC Nicholson, DMC Oparin, AB MacLaren, JM
Citation
Wh. Butler et al., First principles modeling of magnetic random access memory devices (invited), J APPL PHYS, 85(8), 1999, pp. 5834-5839
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
5834 - 5839
Database
ISI
SICI code
0021-8979(19990415)85:8<5834:FPMOMR>2.0.ZU;2-1
Abstract
Giant magnetoresistance (GMR) and spin-dependent tunneling may be used to m ake magnetic random access memory devices. We have applied first-principles based electronic structure techniques to understand these effects and in t he case of GMR to model the transport properties of the devices. (C) 1999 A merican Institute of Physics. [S0021-8979(99)77608-5].