Ferromagnetic/antiferromagnetic structures with ferromagnetic interlayer coupling

Citation
As. Edelstein et al., Ferromagnetic/antiferromagnetic structures with ferromagnetic interlayer coupling, J APPL PHYS, 85(8), 1999, pp. 5886-5888
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
5886 - 5888
Database
ISI
SICI code
0021-8979(19990415)85:8<5886:FSWFIC>2.0.ZU;2-4
Abstract
Multilayer samples and structures composed of NiO(t)/Co(2.5 nm)/NiO(t)/Py(2 .5 nm)/NiO( t) with t = 6.6 and 13.2 nm exhibit ferromagnetic interlayer co upling below 400 K. A crossover is observed between the behavior near 300 K and at 10 K in ferromagnetic(F)/antiferromagnetic(AF) structures. Effects observed near 300 K, but not at 10 K, are an enhancement of Hc and the M-H loop squareness in F/AF multilayers as one increases the number of layers. A possible explanation for the crossover is given based on the domain wall thickness becoming less than the AF film thickness. (C) 1999 American Insti tute of Physics. [S0021-8979(99)67808-2].