Soft-solution process of Fe-Tb-O films for use in high frequency micromagnetic devices

Citation
Pb. Lim et al., Soft-solution process of Fe-Tb-O films for use in high frequency micromagnetic devices, J APPL PHYS, 85(8), 1999, pp. 6007-6009
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
85
Issue
8
Year of publication
1999
Part
2B
Pages
6007 - 6009
Database
ISI
SICI code
0021-8979(19990415)85:8<6007:SPOFFF>2.0.ZU;2-U
Abstract
An attempt for fabricating Fe-Tb-O films with heterogranular structures was made using a soft-solution process with an alternative current for deposit ion. The resultant film composition was found to be sensitive to the concen tration of complex agent, KNaC4H4O6, the intensity i, and the frequency f o f deposition current. These dependencies are well explained from the model for film formation. When KNaC4H4O6 = 283.47 mM, i = 6.7 mA/cm(2), and f = 6 mHz, the film with very high Tb content exceeding 29 at. % were obtained, which exhibited a relatively soft magnetic magnetization of H-c = 29 Oe and M-r/M-s = 0.93. (C) 1999 American Institute of Physics. [S0021-8979(99)777 08-X].