H. Fujii et al., Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor, J APPL PHYS, 85(8), 1999, pp. 6016-6018
The oxide film formed during secondary recrystallization annealing of grain
-oriented 3% Si steel using aluminum nitride as an inhibitor was investigat
ed by x-ray diffraction analysis (XRD), glow discharge optical emission spe
ctrometry (GD-OES), and quantitative chemical analysis (CA) in order to cla
rify the structure and the formation process. Spinel (MgAl2O4) was identifi
ed in addition to forsterite (Mg2SiO4) by XRD. From the consideration on th
e basis of the element distribution of Mg, Si, Al in the glass film and the
quantitative correlation between the amount of spinel and that of forsteri
te, it was concluded that spinel was formed by the substitution reaction of
Si in forsterite film for Al generated by decomposition of AIN. (C) 1999 A
merican Institute of Physics. [S0021-8979(99)77808-4].